Abstract
An analog of the Datta-Das spin field-effect transistor (FET) is investigated, which is all graphene and based on the valley degree of freedom of electrons/holes. The “valley FET” envisioned consists of a quantum wire of gapped graphene (channel) sandwiched between two armchair graphene nanoribbons (source and drain), with the following correspondence to the spin FET: valley (K and ) ↔ spin (up and down), armchair graphene nanoribbons ↔ ferromagnetic leads, graphene quantum wire ↔ semiconductor quantum wire, valley-orbit interaction ↔ Rashba spin-orbit interaction. The device works as follows. The source (drain) injects (detects) carriers in a specific valley polarization. A side gate electric field is applied to the channel and modulates the valley polarization of carriers due to the valley-orbit interaction, thus controlling the amount of current collected at the drain. The valley FET is characterized by (i) smooth interfaces between leads and the channel, (ii) strong valley-orbit interaction for electrical control of drain current, and (iii) vanishing interband valley-flip scattering. By its analogy to the spin FET, the valley FET provides a potential framework to develop low-power FETs for graphene-based nanoelectronics. Macbook travel powerpoint template free download.
Spin-FET is a three terminal device with spin polarized current flowing between drain and source terminals and the gate terminal is used to control this current 13. The structure of spin-FET is shown in Fig. 1 (a), in which the source and drain terminals are made of ferromagnetic material (like iron, cobalt etc.).
- We revisit the spin-injected field effect transistor (spin-FET) in a framework of the lattice model by applying the recursive lattice Green's function approach. In the one-dimensional case the results of simulations in coherent regime reveal noticeable differences from the celebrated Datta-Das model, which lead us to an improved treatment with.
- A spin FET according to an example of the present invention includes a magnetic pinned layer whose magnetization direction is fixed, a magnetic free layer whose magnetization direction is changed.
- Received 27 July 2012
DOI:https://doi.org/10.1103/PhysRevB.86.165411
©2012 American Physical Society
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